PART |
Description |
Maker |
GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
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http:// GSI Technology, Inc.
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BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
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BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
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IDT Integrated Device Technology, Inc.
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BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1KBIT EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
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Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
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AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48 FLASH 128K X 16 TSOP-48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
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ETC Electronic Theatre Controls, Inc.
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CAT5111PI-00 CAT5111P-00 CAT5111U-00TE13 CAT5111P- |
FLEx18 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static DIGITAL POTENTIOMETER|CMOS|DIP|8PIN|PLASTIC FLEx36 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 数字电位器|的CMOS |专科| 8引脚|塑料 DIGITAL POTENTIOMETER|CMOS|TSSOP|8PIN|PLASTIC 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料 DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC 数字电位器|的CMOS |专科| 8引脚|塑料
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Analog Devices, Inc.
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IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器,单周期取 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
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GSI Technology, Inc.
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